Products

- ITO Film

Characteristics of ITO

· Sn4+ is substituted for In3+ in the lattice structure of In203 and residue electron generated during the
  substitution process contributes to electric conductivity.
  > Valence difference between (In3+) and (Sn4+) causes electric conductivity
  (n-type ceramic semi-conductor).

· ITO has less specific resistance than any other materials and excellent electric conductivity.
  It is pellucid enough to allow high permeability in the range of visible ray and highly stable chemically
  and thermally.

ITO flim structure
Specification
Type Using for Resistive TSP
Export
Model name RNCT1-RCCR-SSK-188-400 RNCT1-RCAR-SSK-188-400
Structure Clear
Hard Coated
Anti Glare
Hard Coated
PET - 188um PET - 188um
Clear
Hard Coated
Clear
Hard Coated
ITO Layer ITO Layer
Protection Film Protection Film
ITO State After anneal(*) Amorphous type
Pet Film Thickness(um) Digital Gauge 188 ± 15% 188 ± 15%
Haze(%) Haze meter
(JIS K 7105)
Nippon Denshoku
4.5 ± 1.5 10 ± 2
Hard coat Hardness(H) Pencil hardness
Tester
(JISK5400/K5600)
≥ 3 ≥ 3
Hardcoat Adhesion JIS K 5600 100/100 100/100
Total Light
Transmittance(%)
After anneal(*) Haze meter
(JIS K 7105)
Nippon Denshoku
≥85 ≥85
Surface
Resistance()
After anneal(*) R1 400 ± 80(**) 400 ± 80(**)
Durability(*) High temp.Storage R2/R1
(80˚C, 240hr)
≤ 1.25 ≤ 1.25
Low temp.Storage R3/R1
(-40˚C, 240hr)
≤ 1.25 ≤ 1.25
Heat Cycle R4/R1
(-30˚C⇔800˚C,
20 cvcles)
≤ 1.25 ≤ 1.25
Heat temp.
& High humid.Storage
R5/R1
(60˚,90% R.H.240hr)
≤ 1.25 ≤ 1.25
Chemical
Durability(*)
Acetone Rc1/R1
(Dipping 10min)
≤ 1.2 ≤ 1.2
Ether Rc2/R1
(Dipping 10min)
≤ 1.2 ≤ 1.2
1/4 M KOH Rc3/R1
(Dipping 20min)
≤ 1.2 ≤ 1.2
Remarks
Hue b* 3.0 ± 1.5 3.0 ± 1.5
Uniformity ≤ ±10 ≤ ±10
Linearity ≤ 1.05 ≤ 1.05
Adhesion 100/100 100/100
Curl <10 <10
Thermal contraction
MD
TD
<1.0
<1.0
<1.0
<1.0
Application area